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| 2SD2093 Datasheet, PDF (2/3 Pages) Savantic, Inc. – Silicon NPN Power Transistors | |||
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Product Specification
Silicon NPN Power Transistors
www.jmnic.com
2SD2093
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEsat Collector-emitter saturation voltage IC=5A;IB=10m A
VBEsat Base-emitter saturation voltage
IC=5A;IB=10m A
VCEO(BR) Collector-emitter breakdown voltage IC=5mA;IB=0
VCBO(BR) Collector-base breakdown voltage
IEBO
Emitter cut-off current
ICBO
Collector cut-off current
IC=50mA;RBE=
VEB=5V; IC=0
VCB=80V; IE=0
hFE
DC current gain
IC=5 A ; VCE=3V
fT
Transition frequency
IC=5 A ; VCE=5V
Switching times
ton
Turn-on time
ts
Storage time
tf
Fall time
IC=5A IB1=-IB2=10mA
VCC=50V ,RL=10
MIN TYP. MAX UNIT
0.9
V
2.0
V
110
V
100
V
3.0
mA
0.1
mA
1500 4000
20
MHz
0.6
s
4.8
s
1.6
s
2
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