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| 2SD2089_2015 Datasheet, PDF (2/3 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – Silicon NPN Power Transistors | |||
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Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VEBO
Emitter-base breakdown voltage
IE=200mA , IC=0
VCEsat Collector-emitter saturation voltage IC=2.2A; IB=0.7A
VBEsat Emitter-base saturation voltage
IC=2.2A; IB=0.7A
ICBO
Collector cut-off current
VCB=500V; IE=0
hFE
DC current gain
IC=0.5A ; VCE=5V
fT
Transition frequency
IC=0.1A ; VCE=10V
COB
Collector output capacitance
IE=0 ; VCB=10V;f=1MHz
VF
Diode forward voltage
tf
Fall time
IF=2.2A
ICP=2.2A ;IB1(end)=0.7A
www.jmnic.com
2SD2089
MIN TYP. MAX UNIT
5
V
0.3
1.0
V
0.85 1.0
V
10
A
9
18
3
MHz
95
pF
1.2
1.5
V
0.2
0.5
s
JMnic
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