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| 2SD2061 Datasheet, PDF (2/3 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – TO-220F Plastic-Encapsulate Transistors | |||
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Product Specification
Silicon NPN Power Transistors
www.jmnic.com
2SD2061
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO
Collector-emitter breakdown voltage IC=1mA , IB=0
VCBO
Collector-base breakdown voltage
IC=50 A , IE=0
VEBO
Emitter-base breakdown voltage
IE=50 A , IC=0
VCEsat Collector-emitter saturation voltage IC=2A IB=0.2A
VBEsat Emitter-base saturation voltage
IC=2A IB=0.2A
ICBO
Collector cut-off current
VCB=60V IE=0
IEBO
Emitter cut-off current
VEB=4V; IC=0
hFE
DC current gain
IC=0.5A ; VCE=5V
fT
Transition frequency
IC=0.5A ; VCE=5V
Cob
Output capacitance
IE=0 ; VCB=10V ,f=1MHz
MIN TYP. MAX UNIT
60
V
80
V
5
V
1.0
V
1.5
V
10
A
10
A
100
320
8
MHz
70
Pf
JMnic
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