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| 2SD1894_2015 Datasheet, PDF (2/3 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – Silicon NPN Power Transistors | |||
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Product Specification
Silicon NPN Power Transistors
www.jmnic.com
2SD1894
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO
Collector-emitter voltage
IC=30mA ; IB=0
VCEsat Collector-emitter saturation voltage IC=6A ;IB=6mA
VBEsat Emitter-base saturation voltage
IC=6A ;IB=6mA
ICBO
Collector cut-off current
VCB=160V; IE=0
ICEO
Collector cut-off current
VCE=140V; IB=0
IEBO
Emitter cut-off current
VEB=5V; IC=0
hFE-1
DC current gain
IC=1A ; VCE=5V
hFE -2
DC current gain
IC=6A ; VCE=5V
fT
Transition frequency
IC=0.5A ; VCE=10V;f=1MHz
Switching times
ton
Turn-on time
ts
Storage time
tf
Fall time
IC=6A; VCC=50V
IB1=-IB2=6mA
MIN TYP. MAX UNIT
140
V
2.5
V
3.0
V
100
A
100
A
100
A
2000
5000
30000
20
MHz
2.5
s
5.0
s
2.5
s
JMnic
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