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| 2SD1197_2015 Datasheet, PDF (2/3 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – Silicon NPN Power Transistors | |||
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Product Specification
Silicon NPN Power Transistors
www.jmnic.com
2SD1197
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
VCEO
Collector-emitter breakdown voltage
CONDITIONS
IC=50mA ;RBE=â
VCBO
Collector-base breakdown voltage
IC=5mA ;IE=0
VCEsat Collector-emitter saturation voltage IC=5A; IB=10mA
VBEsat Collector-base saturation voltage
IC=5A; IB=10mA
ICBO
Collector cut-off current
VCB=80V; IE=0
IEBO
Emitter cut-off current
VEB=5V; IC=0
hFE
DC current gain
IC=5A ; VCE=3V
fT
Transition frequency
IC=5A ; VCE=5V
MIN
100
110
1500
TYP.
1.0
4000
20
MAX
1.5
2.0
0.1
3.0
UNIT
V
V
V
V
mA
mA
MHz
JMnic
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