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| 2SD1196_15 Datasheet, PDF (2/3 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – Silicon NPN Power Transistors | |||
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Product Specification
Silicon NPN Power Transistors
www.jmnic.com
2SD1196
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCBO Collector-base breakdown voltage
IC=5mA ; IE=0
VCEO Collector-emitter breakdown voltage
IC=50mA ;RBE=
VCEsat Collector-emitter saturation voltage
IC=4A, IB=8mA
VBEsat Base-emitter saturation voltage
IC=4A, IB=8mA
ICBO
Collector cut-offcurrent
VCB=80V;IE=0
IEBO
Emitter cut-offcurrent
VEB=5V;IC=0
hFE
DC current gain
IC=4A ; VCE=3V
fT
Transition frequency
Switching times
ton
Turn-on time
tstg
Storage time
tf
Fall time
IC=4A ; VCE=5V
IC=500IB1=-500IB2=4A
VCC=50V;RL=12.5â¦;
MIN TYP MAX UNIT
110
V
100
V
0.9
1.5
V
2.0
V
0.1
mA
3.0
mA
1500 4000
20
MHz
0.6
s
4.8
s
1.6
s
JMnic
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