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| 2SD1049_2015 Datasheet, PDF (2/3 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – Silicon NPN Power Transistors | |||
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Product Specification
Silicon NPN Power Transistors
www.jmnic.com
2SD1049
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
VCEO
Collector-emitter breakdown voltage
CONDITIONS
IC=10mA ;RBE=â
VCBO
Collector-base breakdown voltage
IC=0.1mA ;IE=0
VEBO
Emitter-base breakdown voltage
IE=0.1mA ;IC=0
VCEsat Collector-emitter saturation voltage IC=25A IB=2.5A
VBEsat Base-emitter saturation voltage
IC=25A IB=2.5A
ICBO
Collector cut-off current
VCB=120V IE=0
IEBO
Emitter cut-off current
VEB=7V; IC=0
hFE
DC current gain
IC=25A ; VCE=5V
Rth(j-c)
Thermal resistance
Junction to case
Switching times
ton
Turn-on time
tstg
Storage time
tf
Fall time
IC=25A IB1=-IB2=2.5A
RL=3â¦;PW=20 s;
Dutyâ¤2%
MIN
TYP.
MAX UNIT
80
V
120
V
7
V
1.5
V
2.0
V
0.1
mA
0.1
mA
20
1.55
/W
1.0
s
2.5
s
0.4
s
JMnic
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