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| 2SD1023 Datasheet, PDF (2/3 Pages) Shindengen Electric Mfg.Co.Ltd – Darlington Transistor(5A NPN) | |||
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Product Specification
Silicon Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
VCEsat Collector-emitter saturation voltage
VBEsat Emitter-base saturation voltage
ICEO
Collector cut-off current
ICBO
Collector cut-off current
IEBO
Emitter cut-off current
hFE
DC current gain
fT
Transition frequency
ton
Turn-on time
ts
Storage time
tf
Fall time
CONDITIONS
IC=3A; IB=5mA
IC=3A ;IB=5mA
VCE=200V; IB=0
VCB=200V; IE=0
VEB=7V; IC=0
IC=3A ; VCE=3V
IC=0.5A ; VCE=10V
IC=3A; IB=5mA
RL=10
VBB2=4V
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-case Thermal resistance junction to case
www.jmnic.com
2SD1023
MIN
1500
TYP.
MAX
1.5
UNIT
V
2.0
V
0.1
mA
0.1
mA
5
mA
30000
20
MHz
2
s
8
s
5
s
VALUE
4.17
UNIT
/W
JMnic
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