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| 2SC940_2014 Datasheet, PDF (2/3 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – Silicon NPN Power Transistors | |||
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JMnic
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=100mA ; IB=0
V(BR)EBO Emitter-base breakdown voltage
IE=1mA ; IC=0
VCEsat Collector-emitter saturation voltage IC=5A; IB=0.5A
ICBO
Collector cut-off current
IEBO
Emitter cut-off current
hFE
DC current gain
VCB=90V; IE=0
VEB=5V; IC=0
IC=5A ; VCE=5V
fT
Transition frequency
IC=0.5A ; VCE=10V
 hFE-2 Classifications
O
Q
15-35
25-45
P
35-70
Product Specification
2SC940
MIN TYP. MAX UNIT
90
V
7
V
1.5
V
0.1 mA
0.1 mA
15
70
20
MHz
2
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