 English |
|
|
|
|
|
|
|
| 2SC867_15 Datasheet, PDF (2/3 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – Silicon NPN Power Transistors | |||
| |||
| ◁ |
JMnic
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=30mA; IB=0
V(BR)EBO Emitter-base breakdown voltage
IE=1mA; IC=0
VCEsat Collector-emitter saturation voltage IC=1A; IB=0.2 A
VBEsat Base-emitter saturation voltage
IC=1A; IB=0.2 A
ICBO
Collector cut-off current
VCB=400V;IE=0
IEBO
Emitter cut-off current
VEB=5V; IC=0
hFE
DC current gain
IC=0.1A ; VCE=3V
fT
Transition frequency
IC=0.2A ; VCE=10V
Product Specification
2SC867
MIN TYP. MAX UNIT
150
V
5
V
1.0
V
1.5
V
100
A
100
A
50
8
MHz
2
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese