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| 2SC792_2014 Datasheet, PDF (2/3 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – Silicon NPN Power Transistors | |||
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JMnic
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=10mA ;IB=0
V(BR)EBO Emitter-base breakdown voltage
IE=1mA ;IC=0
VCEsat Collector-emitter saturation voltage IC=1.5A; IB=0.3A
VBEsat Base-emitter saturation voltage
ICBO
Collector cut-off current
IEBO
Emitter cut-off current
IC=1.5A; IB=0.3A
VCB=300V; IE=0
VEB=5V; IC=0
hFE
DC current gain
IC=0.3A ; VCE=10V
fT
Transition frequency
IC=0.1A ; VCE=10V
Product Specification
2SC792
MIN TYP. MAX UNIT
300
V
5
V
5.0
V
1.5
V
50
A
50
A
30
200
10
MHz
2
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