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| 2SC5895_2015 Datasheet, PDF (2/3 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – Silicon NPN Power Transistors | |||
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JMnic
Silicon NPN Power Transistors
Product Specification
2SC5895
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEsat Collector-emitter saturation voltage IC=2A; IB=0.25 A
V(BR)CEO Collector-emitter breakdown voltage IC=10mA; IB=0
ICBO
Collector cut-off current
VCB=60V; IE=0
ICEO
Collector cut-off current
VCE=60V; IB=0
hFE-1
DC current gain
IC=0.2A ; VCE=4V
hFE-2
DC current gain
IC=1A ; VCE=4V
hFE-3
DC current gain
IC=2A ; VCE=4V
fT
Transition frequency
IC=0.1A ; VCB=10V;f=10MHz
Switching times
ton
Turn-on time
tstg
Storage time
tf
Fall time
IC=1A;IB1=-IB2=0.1A
VCC=50V
MIN TYP. MAX UNIT
0.5
V
60
V
100
A
100
A
60
80
250
30
100
MHz
0.2
s
0.7
s
0.15
s
2
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