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| 2SC5802 Datasheet, PDF (2/3 Pages) Savantic, Inc. – Silicon NPN Power Transistors | |||
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JMnic
Silicon NPN Power Transistors
Product Specification
2SC5802
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEsat Collector-emitter saturation voltage IC=6A; IB=1.5A
VBEsat Base-emitter saturation voltage
IC=6A; IB=1.5A
ICES
Collector cut-off current
VCE=1400V; VBE=0
ICBO
Collector cut-off current
VCB=800V; IE=0
IEBO
Emitter cut-off current
VEB=4V; IC=0
hFE-1
DC current gain
IC=1A ; VCE=5V
hFE-2
DC current gain
tf
Fall time
IC=6A ; VCE=5V
VCC=200V; IC=6A;IB1=1.2A
IB2=-2.4A;RL =33.3
MIN TYP. MAX UNIT
3.0
V
1.5
V
1.0
mA
10
A
1.0
mA
15
48
7
10
0.1
0.3
s
2
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