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| 2SC5416 Datasheet, PDF (2/4 Pages) Sanyo Semicon Device – Inverter Lighting Applications | |||
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JMnic
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A; IB=0
VCEsat Collector-emitter saturation voltage IC=2A; IB=0.4 A
VBEsat Base-emitter saturation voltage
IC=2A; IB=0.4 A
ICBO
Collector cut-off current
VCB=450V; IE=0
ICES
Collector cut-off current
VCE=1000V; RBE=0
IEBO
Emitter cut-off current
VEB=9V; IC=0
hFE-1
DC current gain
IC=0.1A ; VCE=5V
hFE-2
DC current gain
IC=1.5A ; VCE=5V
Switching times
ts
Storage time
tf
Fall time
IC=2A;IB1=0.4A ;IB2=-0.8A
Product Specification
2SC5416
MIN TYP. MAX UNIT
450
V
1.0
V
1.5
V
10
A
1.0 mA
1.0 mA
30
50
10
2.5
s
0.15
s
2
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