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| 2SC5358_2015 Datasheet, PDF (2/3 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – Silicon NPN Power Transistors | |||
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Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO
Collector-emitter breakdown voltage IC=50mA; IB=0
VCEsat Collector-emitter saturation voltage IC=8 A;IB=0.8A
VBE
Base-emitter voltage
IC=7A ; VCE=5V
ICBO
Collector cut-off current
VCB=230V IE=0
IEBO
Emitter cut-off current
VEB=5V; IC=0
hFE-1
DC current gain
IC=1A ; VCE=5V
hFE-2
DC current gain
IC=7A ; VCE=5V
fT
Transition frequency
IC=1A ; VCE=5V
COB
Output capacitance
IE=0; VCB=10V;f=1MHz
hFE-1 classifications
R
O
55-110
90-180
www.jmnic.com
2SC5358
MIN TYP. MAX UNIT
230
V
3.0
V
1.5
V
5
A
5
A
55
180
35
30
MHz
200
pF
JMnic
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