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| 2SC515_2014 Datasheet, PDF (2/3 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – Silicon NPN Power Transistors | |||
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JMnic
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=1mA; IB=0
V(BR)CBO Collector-base breakdown voltage
IC=10 A; IE=0
V(BR)EBO Emitter-base breakdown voltage
IE=10 A; IC=0
VCEsat Collector-emitter saturation voltage IC=50mA; IB=5m A
ICBO
Collector cut-off current
VCB=200V;IE=0
IEBO
Emitter cut-off current
VEB=5V; IC=0
hFE
DC current gain
IC=50mA ; VCE=10V
Product Specification
2SC515
MIN TYP. MAX UNIT
300
V
300
V
7
V
2.0
V
100 nA
100 nA
30
150
2
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