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| 2SC4467_15 Datasheet, PDF (2/4 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – Silicon NPN Power Transistors | |||
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JMnic
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=50mA ;IB=0
VCEsat Collector-emitter saturation voltage IC=3A ;IB=0.3A
ICBO
Collector cut-off current
VCB=160V; IE=0
IEBO
Emitter cut-off current
VEB=6V; IC=0
hFE
DC current gain
IC=3A ; VCE=4V
COB
Output capacitance
IE=0 ; VCB=10V,f=1MHz
fT
Transition frequency
IC=0.5A ; VCE=12V
Switching times
ton
Turn-on time
ts
Storage time
tf
Fall time
IC=4A;RL=10
IB1=- IB2=0.4A
VCC=40V
 hFE Classifications
O
P
Y
50-100
70-140
90-180
Product Specification
2SC4467
MIN TYP. MAX UNIT
120
V
1.5
V
10
A
10
A
50
180
200
pF
20
MHz
0.13
s
3.50
s
0.32
s
2
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