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| 2SC4350 Datasheet, PDF (2/3 Pages) Savantic, Inc. – Silicon NPN Power Transistors | |||
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JMnic
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A ; IB=0
V(BR)CBO Collector-base breakdown voltage IC=1mA; IE=0;
V(BR)EBO Emitter-base breakdown voltage
IE=5mA; IC=0;
VCEsat Collector-emitter saturation voltage IC=5A; IB=5mA
VBEsat Base-emitter saturation voltage
IC=5A; IB=5mA
ICBO
Collector cut-off current
VCB=100V ;IE=0
IEBO
Emitter cut-off current
VEB=7V; IC=0
hFE
DC current gain
IC=5A ; VCE=2V
 hFE classifications
M
L
K
2000-5000 4000-10000 8000-20000
Product Specification
2SC4350
MIN TYP. MAX UNIT
100
V
100
V
7
V
1.5
V
2.0
V
1
A
5.0
mA
2000
20000
2
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