 English |
|
|
|
|
|
|
|
| 2SC4336_2015 Datasheet, PDF (2/3 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – Silicon NPN Power Transistors | |||
| |||
| ◁ |
JMnic
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=5.0A , IB=0.6A;L=1mH
VCEsat-1 Collector-emitter saturation voltage IC=6A ;IB=0.3A
VCEsat-2 Collector-emitter saturation voltage IC=8A ;IB=0.4A
VBEsat-1 Base-emitter saturation voltage
IC=6A ;IB=0.3A
VBEsat-2 Base-emitter saturation voltage
IC=8A ;IB=0.4A
ICBO
Collector cut-off current
ICEX
Collector cut-off current
IEBO
Emitter cut-off current
VCB=100V; IE=0
VCE=100V; VBE(off)=-1.5V
Ta=125
VEB=5V; IC=0
hFE-1
DC current gain
IC=1A ; VCE=2V
hFE-2
DC current gain
IC=2A ; VCE=2V
hFE-3
DC current gain
IC=6A ; VCE=2V
COB
Collector capacitance
IE=0; VCB=10V; f=1MHz
fT
Transition frequency
IC=0.5A; VCE=10V
Switching times
ton
Turn-on time
ts
Storage time
tf
Fall time
IC=6A ;IB1=-IB2=0.3A
VCC 50V;RL=8.3
 hFE-2 Classifications
M
L
N
100-200 150-300 200-400
Product Specification
2SC4336
MIN TYP. MAX UNIT
100
V
0.3
V
0.5
V
1.2
V
1.5
V
10
A
10
A
1.0 mA
10
A
100
100
400
60
120
pF
150
MHz
0.3
s
1.5
s
0.3
s
2
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese