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| 2SC4303_2015 Datasheet, PDF (2/3 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – Silicon NPN Power Transistors | |||
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JMnic
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=10mA; IB=0
V(BR)EBO Emitter-base breakdown voltage
IE=1mA; IC=0
VCEsat Collector-emitter saturation voltage IC=2.5A;IB=0.5A
VBEsat Base-emitter saturation voltage
IC=2.5A;IB=0.5A
ICBO
Collector cut-off current
VCB=1200V; IE=0
IEBO
Emitter cut-off current
VEB=7V; IC=0
hFE
DC current gain
IC=2.5A ; VCE=4V
fT
Transition frequency
IE=0.5A ; VCE=12V
Product Specification
2SC4303
MIN TYP. MAX UNIT
800
V
7
V
1.0
V
1.5
V
100
A
100
A
6
4
MHz
2
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