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| 2SC4301_2015 Datasheet, PDF (2/4 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – Silicon NPN Power Transistors | |||
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JMnic
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=10mA; IB=0
VCEsat Collector-emitter saturation voltage IC=3A;IB=0.6A
VBEsat Base-emitter saturation voltage
IC=3A;IB=0.6A
ICBO
Collector cut-off current
VCB=800V; IE=0
IEBO
Emitter cut-off current
VEB=7V; IC=0
hFE
DC current gain
IC=3A ; VCE=4V
fT
Transition frequency
IE=-1A ; VCE=12V
COB
Output capacitance
VCB=10V;f=1MHz
Switching times
ton
Turn-on time
tstg
Storage time
tf
Fall time
IC=3A;IB1=0.45A;
IB2=-1.5A;
RL=83 ;VCC=250V
Product Specification
2SC4301
MIN TYP. MAX UNIT
800
V
0.5
V
1.2
V
100
A
100
A
10
30
6
MHz
105
pF
1
s
5
s
1
s
2
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