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| 2SC4299_2015 Datasheet, PDF (2/4 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – Silicon NPN Power Transistors | |||
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JMnic
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=10mA; IB=0
VCEsat Collector-emitter saturation voltage IC=1A;IB=0.2A
VBEsat Base-emitter saturation voltage
IC=1A;IB=0.2A
ICBO
Collector cut-off current
VCB=800V ;IE=0
IEBO
Emitter cut-off current
VEB=7V; IC=0
hFE
DC current gain
fT
Transition frequency
COB
Output capacitance
Switching times
IC=1A ; VCE=4V
IE=-0.3A ; VCE=12V
VCB=10V;f=1MHz
ton
Turn-on time
tstg
Storage time
tf
Fall time
IC=1A; IB1=0.15A;
IB2=-0.5A; RL=250â¦
VCC=250V
Product Specification
2SC4299
MIN TYP. MAX UNIT
800
V
0.5
V
1.2
V
100
A
100
A
10
30
6
MHz
50
pF
1.0
s
5.0
s
1.0
s
2
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