2SC4160 Datasheet, PDF (2/3 Pages) Sanyo Semicon Device – Switching Regulator Applications

Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V_CEO
Collector-emitter breakdown voltage I_C=5mA ; R_BE=
V_CBO
Collector-base breakdown voltage
I_C=1mA ; I_E=0
V_EBO
Emitter-base breakdown voltage
I_E=1mA ; I_C=0
V_CEsat Collector-emitter saturation voltage I_C=2A ;I_B=0.4A
V_BEsat Base-emitter saturation voltage
I_C=2A ;I_B=0.4A
I_CBO
Collector cut-off current
V_CB=400V; I_E=0
I_EBO
Emitter cut-off current
V_EB=5V; I_C=0
h_FE-1
DC current gain
I_C=0.4A ; V_CE=5V
h_FE-2
DC current gain
I_C=2A ; V_CE=5V
h_FE-3
DC current gain
I_C=10mA ; V_CE=5V
C_OB
Output capacitance
I_E=0; V_CB=10V;f=1MHz
f_T
Transition frequency
I_C=0.4A ; V_CE=10V
Switching times
t_on
Turn-on time
t_s
Storage time
t_f
Fall time
I_C=3A; I_B1=0.6A
I_B2=-1.2A
V_CC=200V ,R_L=66.6
h_FE-1 Classifications
L
M
15-30
20-40
N
30-50
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2SC4160
MIN TYP. MAX UNIT
400
V
500
V
7
V
0.8
V
1.5
V
10
A
10
A
15
50
10
10
50
pF
20
MHz
0.5
s
2.5
s
0.3
s
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