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| 2SC4157_15 Datasheet, PDF (2/3 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – Silicon NPN Power Transistors | |||
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JMnic
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=10mA ,IB=0
V(BR)CBO Collector-base breakdown voltage
IC=1mA ,IE=0
VCEsat Collector-emitter saturation voltage IC=5A; IB=1A
VBEsat Base-emitter saturation voltage
IC=5A; IB=1A
ICBO
Collector cut-off current
VCB=500V; IE=0
IEBO
Emitter cut-off current
VEB=8V; IC=0
hFE
DC current gain
IC=5A ; VCE=5V
Switching times
tr
Rise time
tstg
Storage time
tf
Fall time
VCC 200V
IB1=-IB2=0.5A ; RL=40
Product Specification
2SC4157
MIN TYP. MAX UNIT
450
V
600
V
1.0
V
2.0
V
100
A
1.0
mA
15
0.5
s
2.5
s
0.5
s
2
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