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| 2SC4153_2014 Datasheet, PDF (2/4 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – Silicon NPN Power Transistors | |||
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JMnic
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=50mA ;IB=0
VCEsat Collector-emitter saturation voltage IC=3A ;IB=0.3A
VBEsat Base-emitter saturation voltage
IC=3A; IB=0.3A
ICBO
Collector cut-off current
VCB=200V; IE=0
IEBO
Emitter cut-off current
VEB=8V; IC=0
hFE-1
DC current gain
IC=0.6A ; VCE=4V
hFE-2
DC current gain
IC=3A ; VCE=4V
fT
Transition frequency
IE=-0.5A ; VCE=12V
COB
Collector output capacitance
f=1MHz;VCB=10V
Switching times
ton
Turn-on time
ts
Storage time
tf
Fall time
IC=3A
IB1=0.3A ,IB2=-0.6A
VCC=50V, RL=16.7
Product Specification
2SC4153
MIN TYP. MAX UNIT
120
V
0.5
V
1.2
V
0.1 mA
0.1 mA
70
250
70
220
30
MHz
110
pF
0.5
s
3.0
s
0.5
s
2
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