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2SC4140 Datasheet, PDF (2/4 Pages) Sanken electric – Silicon NPN Triple Diffused Planar Transistor(Switching Regulator and General Purpose)
JMnic
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=25mA ; IB=0
VCEsat Collector-emitter saturation voltage IC=10A; IB=2A
VBEsat Base-emitter saturation voltage
IC=10A; IB=2A
ICBO
Collector cut-off current
VCB=500V ;IE=0
IEBO
Emitter cut-off current
VEB=10V; IC=0
hFE
DC current gain
IC=10A ; VCE=4V
fT
Transition frequency
IE=-2A ; VCE=12V
COB
Collector output capacitance
f=1MHz ; VCB=10V
Switching times
ton
Turn-on time
tstg
Storage time
tf
Fall time
IC=10A;IB1=1A;
IB2=-2A;RL=20
VCC=200V
Product Specification
2SC4140
MIN TYP. MAX UNIT
400
V
0.5
V
1.3
V
100
A
100
A
10
30
10
MHz
165
pF
1.0
s
3.0
s
0.5
s
2