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| 2SC4139_15 Datasheet, PDF (2/4 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – Silicon NPN Power Transistors | |||
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JMnic
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=25mA ; IB=0
VCEsat Collector-emitter saturation voltage IC=8A; IB=1.6A
VBEsat Base-emitter saturation voltage
IC=8A; IB=1.6A
ICBO
Collector cut-off current
VCB=500V ;IE=0
IEBO
Emitter cut-off current
VEB=10V; IC=0
hFE
DC current gain
IC=8A ; VCE=4V
fT
Transition frequency
IE=-1.5A ; VCE=12V
COB
Collector output capacitance
f=1MHz ; VCB=10V
Switching times
ton
Turn-on time
tstg
Storage time
tf
Fall time
IC=8A;IB1=0.8A;
IB2=-1.6A;RL=25
VCC=200V
Product Specification
2SC4139
MIN TYP. MAX UNIT
400
V
0.5
V
1.3
V
100
A
100
A
10
30
10
MHz
85
pF
1.0
s
3.0
s
0.5
s
2
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