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| 2SC4055_15 Datasheet, PDF (2/3 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – Silicon NPN Power Transistors | |||
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Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
VCEO(SUS) Collector-emitter sustaining voltage
VCEsat Collector-emitter saturation voltage
VBEsat Base-emitter saturation voltage
ICBO
Collector cut-off current
ICEO
Collector cut-off current
IEBO
Emitter cut-off current
hFE-1
DC current gain
hFE-2
DC current gain
fT
Transition frequency
Switching times
Ton
Turn-on time
tstg
Storage time
tf
Fall time
CONDITIONS
IC=0.2A ; IB=0
IC=4A; IB=0.8A
IC=4A; IB=0.8A
At rated voltage
At rated voltage
At rated voltage
IC=4A ; VCE=5V
IC=1mA ; VCE=5V
IC=0.8A ; VCE=10V
IC=4A;IB1=0.8A;
IB2=1.6A;RL=37.5
VBB2=4V
www.jmnic.com
2SC4055
MIN TYP. MAX UNIT
450
V
1.0
V
1.5
V
0.1
mA
0.1
mA
10.
mA
10
5
20
MHz
0.5
s
2.0
s
0.2
s
JMnic
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