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| 2SC4053_15 Datasheet, PDF (2/3 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – Silicon NPN Power Transistors | |||
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JMnic
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A ; IB=0
VCEsat Collector-emitter saturation voltage IC=2.5A; IB=0.5A
VBEsat Base-emitter saturation voltage
IC=2.5A; IB=0.5A
ICBO
Collector cut-off current
At rated voltage
ICEO
Collector cut-off current
At rated voltage
IEBO
Emitter cut-off current
At rated voltage
hFE-1
DC current gain
IC=2.5A ; VCE=5V
hFE-2
DC current gain
IC=1mA ; VCE=5V
fT
Transition frequency
IC=0.5A ; VCE=10V
Switching times
ton
Turn-on time
tstg
Storage time
tf
Fall time
IC=2.5A;IB1=0.5A;
IB2=1A;RL=60
VBB2=4V
Product Specification
2SC4053
MIN TYP. MAX UNIT
450
V
1.0
V
1.5
V
0.1
mA
0.1
mA
0.1
mA
10
5
20
MHz
0.5
s
2.0
s
0.2
s
2
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