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| 2SC4029_2014 Datasheet, PDF (2/4 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – Silicon NPN Power Transistors | |||
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JMnic
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=50mA ;IB=0
VCEsat Collector-emitter saturation voltage IC=8A ;IB=0.8A
VBE
Base-emitter voltage
IC=7A ; VCE=5V
ICBO
Collector cut-off current
VCB=230V IE=0
IEBO
Emitter cut-off current
VEB=5V; IC=0
hFE-1
DC current gain
IC=1A ; VCE=5V
hFE-2
DC current gain
IC=7A ; VCE=5V
fT
Transition frequency
IC=1A ; VCE=5V
COB
Collector output capacitance
f=1MHz;VCB=10V
 hFE-1 classifications
R
O
55-110
80-160
Product Specification
2SC4029
MIN TYP. MAX UNIT
230
V
3.0
V
1.5
V
5
A
5
A
55
160
35
30
MHz
270
pF
2
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