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2SC4026_15 Datasheet, PDF (2/4 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – Silicon NPN Power Transistors
JMnic
Silicon NPN Power Transistors
Product Specification
2SC4026
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=10mA , IB=0
VCEsat Collector-emitter saturation voltage IC=2A ;IB=0.4A
VBEsat Base-emitter saturation voltage
IC=2A ;IB=0.4A
ICBO
Collector cut-off current
VCB=500V; IE=0
IEBO
Emitter cut-off current
VEB=5V; IC=0
hFE-1
DC current gain
IC=0.1A ; VCE=5V
hFE-2
DC current gain
IC=2A ; VCE=5V
fT
Transition frequency
IC=0.5A ; VCE=10V;f=1MHz
Switching times
ton
Turn-on time
ts
Storage time
tf
Fall time
IC=2A ;IB1=0.4A;IB2=-0.8A
VCC=150V
MIN TYP. MAX UNIT
400
V
1.0
V
1.5
V
100
A
100
A
15
8
5
MHz
0.7
s
2.0
s
0.3
s
2