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| 2SC4004_15 Datasheet, PDF (2/3 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – Silicon NPN Power Transistors | |||
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Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
specified
www.jmnic.com
2SC4004
unless
otherwise
SYMBOL
PARAMETER
VCEO Collector-emitter breakdown voltage
VCEsat Collector-emitter saturation voltage
VBEsat Base-emitter saturation voltage
ICBO
Collector cut-off current
IEBO
Emitter cut-off current
hFE-1
DC current gain
hFE-2
DC current gain
fT
Transition frequency
Switching times
ton
Turn-on time
ts
Storage time
tf
Fall time
CONDITIONS
IC=1mA , IB=0
IC=0.2A IB=0.04A
IC=0.2A IB=0.04A
VCB=900V IE=0
VEB=7V; IC=0
IC=0.05A ; VCE=5V
IC=0.5A ; VCE=5V
IC=0.05A;
VCE=10V;f=1MHz
IC=0.2A ;IB1=0.04A
IB2=-0.04A;
VCC=250V
MIN
TYP.
MAX UNIT
800
V
1.5
V
1.0
V
50
A
50
A
6
3
4
MHz
1.0
s
3.0
s
1.0
s
JMnic
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