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| 2SC3988 Datasheet, PDF (2/3 Pages) Sanyo Semicon Device – Switching Regulator Applications | |||
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Product Specification
Silicon NPN Power Transistors
www.jmnic.com
2SC3988
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
VCBO
Collector-base breakdown voltage
IC=1mA ; IE=0
800
VCEO
Collector-emitter breakdown voltage IC=5mA ;RBE=
500
VEBO
Emitter-base breakdown voltage
IC=1mA ;IC=0
7
VCEX(SUS) Collector-emitter sustain voltage
IC=10A;IB1=-IB2=2A;
L=200 H
500
VCEsat Collector-emitter saturation voltage IC=12A IB=2.4A
VBEsat Base-emitter saturation voltage
IC=12A IB=2.4A
ICBO
Collector cut-off current
VCB=500V; IE=0
IEBO
Emitter cut-off current
VEB=5V; IC=0
hFE-1
DC current gain
IC=2.4A ; VCE=5V
15
hFE-2
DC current gain
IC=12A ; VCE=5V
8
Cob
Output capacitance
IE=0 ; VCB=10V;f=1MHz
fT
Transition frequency
IC=2.4A ; VCE=10V
Switching times
ton
Turn-on time
tstg
Storage time
tf
Fall time
5IB1=-2.5IB2= IC=14A
VCC 200V;RL=14.3
TYP.
MAX
1.0
1.5
10
10
50
UNIT
V
V
V
V
V
V
A
A
260
pF
18
MHz
0.5
s
3.0
s
0.3
s
hFE Classifications
L
M
15-30
20-40
N
30-50
JMnic
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