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| 2SC3949 Datasheet, PDF (2/3 Pages) Savantic, Inc. – Silicon NPN Power Transistors | |||
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JMnic
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=10mA ;RBE=
V(BR)CBO Collector-base breakdown voltage
IC=1mA ;IE=0
V(BR)EBO Emitter-base breakdown voltage
IE=1mA ;IC=0
VCEsat Collector-emitter saturation voltage IC=10A ;IB=2A
VBEsat Base-emitter saturation voltage
ICBO
Collector cut-off current
IEBO
Emitter cut-off current
IC=10A ;IB=2A
VCE=800V; IE=0
TC=100
VEB=6V ;IC=0
hFE
DC current gain
IC=10A ; VCE=5V
fT
Transition frequency
IC=2A ; VCE=10V
COB
Output capacitance
IE=0 ; VCB=10V;f=1MHz
Product Specification
2SC3949
MIN TYP. MAX UNIT
500
V
850
V
7
V
1.0
V
1.5
V
0.1
1.0
mA
0.1 mA
10
30
20
MHz
260
pF
2
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