2SC3947 Datasheet, PDF (2/3 Pages) Fujitsu Component Limited. – Silicon High Speed Power Transistor

JMnic
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V_(BR)CEO Collector-emitter breakdown voltage I_C=10mA ;R_BE=
V_(BR)CBO Collector-base breakdown voltage
I_C=1mA ;I_E=0
V_(BR)EBO Emitter-base breakdown voltage
I_E=1mA ;I_C=0
V_CEsat Collector-emitter saturation voltage I_C=2.5A ;I_B=0.5A
V_BEsat Base-emitter saturation voltage
I_CBO
Collector cut-off current
I_EBO
Emitter cut-off current
I_C=2.5A ;I_B=0.5A
V_CE=800V; I_E=0
T_C=100
V_EB=6V ;I_C=0
h_FE
DC current gain
I_C=2.5A ; V_CE=5V
f_T
Transition frequency
I_C=0.5A ; V_CE=10V
C_OB
Output capacitance
Switching times
I_E=0 ; V_CB=10V;f=1MHz
t_r
Rise time
t_stg
Storage time
t_f
Fall time
I_C=2.5A ; V_CC=250V
I_B1=0.5A; I_B2=-1A
Product Specification
2SC3947
MIN TYP. MAX UNIT
500
V
850
V
7
V
1.0
V
1.5
V
0.1
1.0
mA
0.1 mA
10
30
20
MHz
70
pF
0.5
s
3.0
s
0.3
s
2