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| 2SC3873_15 Datasheet, PDF (2/3 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – Silicon NPN Power Transistors | |||
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Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=10mA;IB=0
VCEsat Collector-emitter saturation voltage IC=7A ;IB=1.4A
VBEsat Base-emitter saturation voltage
IC=7A ;IB=1.4A
ICBO
Collector cut-off current
VCB=500V; IE=0
IEBO
Emitter cut-off current
VEB=5V; IC=0
hFE-1
DC current gain
IC=0.1A ; VCE=5V
hFE-2
DC current gain
IC=7A ; VCE=5V
fT
Transition frequency
IC=0.5A ; VCE=10V
Switching times
ton
Turn-on time
tstg
Storage time
tf
Fall time
IC=7A; VCC=150V
IB1=1.4A;IB2=-2.8A
www.jmnic.com
2SC3873
MIN TYP. MAX UNIT
400
V
1.0
V
1.5
V
100
A
100
A
15
8
30
MHz
0.7
s
2.0
s
0.3
s
JMnic
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