 English |
|
|
|
|
|
|
|
| 2SC3058 Datasheet, PDF (2/3 Pages) Savantic, Inc. – Silicon NPN Power Transistors | |||
| |||
| ◁ |
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=10mA ; IB=0
V(BR)CBO Collector-base breakdown voltage
IC=1mA; IE=0
V(BR)EBO Emitter-base breakdown voltage
IE=1mA; IC=0
VCEsat Collector-emitter saturation voltage IC=20A; IB=4A
VBEsat Base-emitter saturation voltage
IC=20A; IB=4A
ICBO
Collector cut-off current
VCB=500V; IE=0
IEBO
Emitter cut-off current
VEB=5V; IC=0
hFE-1
DC current gain
IC=1A ; VCE=5V
hFE-2
DC current gain
IC=20A ; VCE=5V
fT
Transition frequency
IC=4A ; VCE=10V
COB
Collector output capacitance
IE=0 ; VCB=10V;f=1MHz
www.jmnic.com
2SC3058
MIN TYP. MAX UNIT
400
V
600
V
7
V
1.0
V
1.5
V
10
A
10
A
15
50
10
40
30
MHz
420
pF
JMnic
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese