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| 2SC2580_2014 Datasheet, PDF (2/3 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – Silicon NPN Power Transistors | |||
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JMnic
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=25mA ;IB=0
V(BR)CBO Collector-base breakdown voltage
IC=1mA ;IE=0
V(BR)EBO Emitter-base breakdown voltage
IE=1mA ;IC=0
VCEsat Collector-emitter saturation voltage IC=5A; IB=0.5A
ICBO
Collector cut-off current
VCB=180V; IE=0
IEBO
Emitter cut-off current
VEB=6V; IC=0
hFE
DC current gain
IC=3A ; VCE=4V
fT
Transition frequency
IC=0.5A ; VCE=10V
Product Specification
2SC2580
MIN TYP. MAX UNIT
120
V
180
V
6
V
2.5
V
100
A
100
A
50
20
MHz
2
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