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| 2SC2578_15 Datasheet, PDF (2/3 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – Silicon NPN Power Transistors | |||
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Product Specification
Silicon NPN Power Transistors
www.jmnic.com
2SC2578
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CBO Collector-base breakdown voltage
IC=5mA; IE=0
V(BR)CEO Collector-emitter breakdown voltage IC=10mA ;RBE=
V(BR)EBO Emitter-base breakdown voltage
IC=0 ;IE=5mA
ICBO
Collector cut-off current
IEBO
Emitter cut-off current
hFE1
DC current gain
VCB=100V; IE=0
VEB=4V; IC=0
IC=1A ; VCE=5V
hFE2
DC current gain
IC=3A ; VCE=5V
VCE(sat) Collector-emitter saturation voltage IC=3A ; IB=0.3A
MIN TYP. MAX UNIT
140
V
100
V
6
V
0.1
mA
0.1
mA
55
160
50
2
V
JMnic
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