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| 2SC2564_2014 Datasheet, PDF (2/3 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – Silicon NPN Power Transistors | |||
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JMnic
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=0.1A; IB=0
V(BR)EBO Emitter-base breakdown voltage
IE=10mA; IC=0
VCEsat Collector-emitter saturation voltage IC=5 A; IB=0.5 A
VBE
Base-emitter on voltage
ICBO
Collector cut-off current
IEBO
Emitter cut-off current
IC=5A ; VCE=5V
VCB=140V; IE=0
VEB=5V; IC=0
hFE-1
DC current gain
IC=1A ; VCE=5V
hFE-2
DC current gain
IC=5A ; VCE=5V
fT
Transition frequency
IC=1A ; VCE=10V
 hFE-1 classifications
R
O
Y
55-110 80-160 120-240
Product Specification
2SC2564
MIN TYP. MAX UNIT
140
V
5
V
2.0
V
2.0
V
50
A
50
A
55
240
40
80
MHz
2
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