2SC2344 Datasheet, PDF (2/5 Pages) Savantic, Inc. – Silicon NPN Power Transistors

JMnic
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V_(BR)CEO Base-emitter breakdown voltage
I_C=10mA ,R_BE=
V_(BR)CBO Collector-base breakdown voltage I_C=1mA; I_E=0
V_(BR)EBO Emitter-base breakdown voltage
I_E=1mA; I_C=0
V_CEsat Collector-emitter saturation voltage I_C=0.5A; I_B=50mA
V_BE
Base-emitter voltage
I_C=10mA ; V_CE=5V
I_CBO
Collector cut-off current
V_CB=120V; I_E=0
I_EBO
Emitter cut-off current
V_EB=4V; I_C=0
h_FE
DC current gain
I_C=0.3A ; V_CE=5V
f_T
Transition frequency
I_C=50mA ; V_CE=10V
C_ob
Output capacitance
f=1MHz ; V_CB=10V
Switching times resistive load
t_on
Turn-on time
t_s
Storage time
I_C=0.5A I_B1=- I_B2=50mA
t_f
Fall time
‹ h_FE Classifications
D
E
60-120
100-200
Product Specification
2SC2344
MIN TYP. MAX UNIT
160
V
180
V
6
V
0.3
V
1.5
V
10
A
10
A
60
200
100
MHz
23
pF
0.15
s
0.81
s
0.48
s
2