2SC2331_15 Datasheet, PDF (2/3 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – Silicon Power Transistors

Product Specification
Silicon Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
V_CEO(SUS) Base-emitter sustaining voltage
V_CEsat Collector-emitter saturation voltage
V_BEsat Base-emitter saturation voltage
I_CBO
Collector cut-off current
I_EBO
Emitter cut-off current
h_FE-1
DC current gain
h_FE-2
DC current gain
Switching times resistive load
t_on
Turn-on time
t_s
Storage time
t_f
Fall time
CONDITIONS
I_C=1.0A ,I_B=0.1A,L=1mH
I_C=1A; I_B=0.1A
I_C=1A ;I_B=0.1A
V_CB=100V; I_E=0
V_EB=5V; I_C=0
I_C=0.1A ; V_CE=5V
I_C=1A ; V_CE=5V
I_C=1.0A I_B1=- I_B2=0.1A
R_L=50 ;V_CC 50V
h_FE-2 Classifications
M
L
40-80
60-120
K
100-200
www.jmnic.com
2SC2331
MIN TYP. MAX UNIT
100
V
0.6
V
1.5
V
10
A
10
A
40
40
200
0.5
s
1.5
s
0.5
s
3