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| 2SC2258 Datasheet, PDF (2/4 Pages) Panasonic Semiconductor – Silicon NPN triple diffusion planar type | |||
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JMnic
Silicon NPN Power Transistors
Product Specification
2SC2258
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
ICER
Collector cutoff current
VCE=250V;RBE=100k
V(BR)EBO Emitter-base breakdown voltage
IE=0.1mA ;IC=0
VCEsat Collector-emitter saturation voltage IC=50mA ;IB=5m A
VBE
hFE-1
hFE-2
Base-emitter voltage
DC current gain
DC current gain
IC=40mA ; VCE=20V
IC=40mA ; VCE=20V
IC=5mA ; VCE=50V
COB
Output capacitance
IE=0; VCB=50V;f=1MHz
fT
Transition frequency
IE=-10mA ; VCE=10V,f=200MHz
MIN TYP. MAX UNIT
100
A
7
V
1.2
V
1.2
V
40
30
3
4.5 pF
100
MHz
2
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