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2SC2246 Datasheet, PDF (2/3 Pages) Savantic, Inc. – Silicon NPN Power Transistors
Product Specification
Silicon Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
VCEO(SUS) Collector-emitter sustaining voltage
CONDITIONS
IC=0.1A ; L=25mH
VCEsat Collector-emitter saturation voltage IC=6A IB=1.2A
VBesat
ICBO
ICEO
Base-emitter saturation voltage
Collector cut-off current
Collector cut-off current
IC=6A IB=1.2A
VCB=450V IE=0
TC=125
VCE=400V IB=0
IEBO
Emitter cut-off current
VEB=5V; IC=0
hFE
DC current gain
IC=6A ; VCE=5V
Switching times
ton
Turn-on time
ts
Storage time
IC=6A IB1=- IB2=1.2A
tf
Fall time
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2SC2246
MIN
TYP.
MAX UNIT
400
V
1.2
V
1.5
V
1
4
mA
5.0
mA
1.0
mA
10
1.0
s
2.0
s
1.0
s
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