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| 2SC1922_2014 Datasheet, PDF (2/3 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – Silicon NPN Power Transistors | |||
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JMnic
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A ; IB=0
V(BR)EBO Emitter-base breakdown voltage
IE=1mA ; IC=0
VCEsat Collector-emitter saturation voltage IC=2A; IB=0.6A
VBEsat Base-emitter saturation voltage
IC=2A; IB=0.6A
ICBO
Collector cut-off current
VCB=600V; IE=0
IEBO
Emitter cut-off current
VEB=5V; IC=0
hFE
DC current gain
IC=0.5A ; VCE=5V
Product Specification
2SC1922
MIN TYP. MAX UNIT
800
V
6
V
5.0
V
1.5
V
10
A
10
A
8
40
2
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