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| 2SC1913_2014 Datasheet, PDF (2/3 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – Silicon NPN Power Transistors | |||
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Product Specification
Silicon NPN Power Transistors
www.jmnic.com
2SC1913 2SC1913A
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO
Base-emitter
breakdown voltage
2SC1913
2SC1913A
IC=0.1mA ,IB=0
VEBO
Emitter-base breakdown voltage
IE=10 A ,IC=0
VCEsat
Collector-emitter
saturation voltage
2SC1913
2SC1913A
IC=0.3A; IB=30mA
VBEsat Base-emitter saturation voltage
IC=0.3A; IB=30mA
ICBO
Collector cut-off current
VCB=120V; IE=0
IEBO
Emitter cut-off current
VEB=4V; IC=0
hFE-1
DC current gain
IC=150mA ; VCE=10V
hFE-2
DC current gain
IC=500mA ; VCE=5V
COB
Output capacitance
IE=0 ; VCB=100V;f=1MHz
fT
Transition frequency
IC=50mA ; VCE=10V
hFE-1 Classifications
P
Q
65-110
90-155
R
130-220
S
185-330
MIN TYP. MAX UNIT
150
V
180
5
V
1.0
V
1.5
1.5
V
1
A
1
A
65
330
50
15
pF
120
MHz
JMnic
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