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| 2SC1050_15 Datasheet, PDF (2/3 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – Silicon NPN Power Transistors | |||
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Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A ; IB=0
VCEsat Collector-emitter saturation voltage IC=0.5A; IB=0.1A
VBEsat Base-emitter saturation voltage
IC=0.5A; IB=0.1A
ICBO
Collector cut-off current
VCB=300V; IE=0
ICEO
Collector cut-off current
VCE=300V; IB=0
IEBO
Emitter cut-off current
VEB=6V; IC=0
hFE
DC current gain
IC=0.3A ; VCE=5V
www.jmnic.com
2SC1050
MIN TYP. MAX UNIT
300
V
1.2
V
1.5
V
0.1
mA
0.5
mA
0.1
mA
30
200
2
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