2SB941 Datasheet, PDF (2/4 Pages) Panasonic Semiconductor – Silicon PNP epitaxial planar type(For low-frequency power amplification)

JMnic
Silicon PNP Power Transistors
Product Specification
2SB941 2SB941A
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V_CEO
Collector-emitter
voltage
2SB941
2SB941A
I_C=-30mA ,I_B=0
V_CEsat Collector-emitter saturation voltage I_C=-3A, I_B=-0.375A
V_BE
Base-emitter voltage
I_C=-3A ; V_CE=-4V
I_EBO
Emitter cut-off current
V_EB=-5V; I_C=0
I_CEO
Collector
cut-off current
2SB941 V_CE=-30V; I_B=0
2SB941A V_CE=-60V; I_B=0
I_CES
Collector
cut-off current
2SB941 V_CE=-60V; V_BE=0
2SB941A V_CE=-80V; V_BE=0
h_FE-1
DC current gain
I_C=-1A ; V_CE=-4V
h_FE-2
DC current gain
I_C=-3A ; V_CE=-4V
f_T
Transition frequency
I_C=0.5A; V_CE=-10V,f=10MHz
Switching times
t_on
Turn-on time
t_stg
Storage time
t_f
Fall time
I_C=-1A
I_B1=-0.1A ,I_B2=0.1A
‹ h_FE-1 Classifications
Q
P
70-150
120-250
MIN TYP. MAX UNIT
-60
V
-80
-1.2
V
-1.8
V
-1
mA
-0.3 mA
-0.2 mA
70
250
10
30
MHz
0.5
s
1.2
s
0.3
s
2