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| 2SB772_15 Datasheet, PDF (2/5 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – Silicon PNP Power Transistors | |||
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JMnic
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=-10mA ;IB=0
VCEsat Collector-emitter saturation voltage IC=-2.0A; IB=-0.2A
VBEsat Base-emitter saturation voltage
IC=-2.0A ;IB=-0.2A
ICBO
Collector cut-off current
VCB=-30V; IE=0
IEBO
Emitter cut-off current
VEB=-3V; IC=0
hFE-1
DC current gain
IC=-20mA ; VCE=-2V
hFE-2
DC current gain
IC=-1A ; VCE=-2V
fT
Transition frequency
IC=-0.1A ; VCE=-5V
COB
Collector output capacitance
IE=0; f=1MHz ; VCB=-10V
 hFE-2 Classifications
R
Q
P
E
60-120 100-200 160-320 200-400
Product Specification
2SB772
MIN TYP. MAX UNIT
-30
V
-0.3 -0.5
V
-1.0 -2.0
V
-1.0
A
-1.0
A
30
60
400
80
MHz
55
pF
2
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