2SB1225 Datasheet, PDF (2/3 Pages) Sanyo Semicon Device – Driver Applications

JMnic
Silicon PNP Power Transistors
Product Specification
2SB1225
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V_(BR)CBO Collector-base breakdown voltage
I_C=-5mA; I_E=0
V_(BR)CEO Collector-emitter breakdown voltage IC=-50mA; RBE=
V_CEsat Collector-emitter saturation voltage I_C=-5A ; I_B=-10mA
V_BEsat Base-emitter saturation voltage
I_C=-5A ; I_B=-10mA
I_CBO
Collector cut-off current
V_CB=-40V;I_E=0
I_EBO
Emitter cut-off current
V_EB=-5V;I_C=0
h_FE
DC current gain
I_C=-5A ; V_CE=-2V
Switching times
t_on
Turn-on time
t_s
Storage time
t_f
Fall time
I_C=5A; I_B1=0.01A
-I_B2=0.01A
V_CC=20V ,R_L=4
MIN TYP. MAX UNIT
-70
V
-60
V
-1.0 -1.5
V
-2.0
V
-0.1
mA
-3.0
mA
2000 5000
0.5
s
1.5
s
1.7
s
2